UN1210

SiliconNPNepitaxialplanertransistor

SiliconNPNepitaxialplanartype Fordigitalcircuits ■Features •Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts •Mtypepackageallowingeasyautomaticandmanualinsertionas wellasstand-alonefixingtotheprintedcircuitboard

UN1210

SurfaceSingleGasDischargeTube

Features Non-Radioactive ROHScompliant Ultralowcapacitance(

UN1210-XXXH

MULTILAYERCHIPVARISTORS

Feature VaristorVoltagefrom12Vto470V Fastresponsetime Lowleakagecurrent Highsurgecurrentability Bidirectionalclamping,highenergy WideOperatingtemperaturerangefrom-55℃-125℃ SuitableforESDprotection

UNR1210

SiliconNPNepitaxialplanertransistor

SiliconNPNepitaxialplanertransistor Forswitching/digitalcircuits ■Features ●Twoelementsincorporatedintoonepackage. (Transistorswithbuilt-inresistor) ●Reductionofthemountingareaandassemblycostbyonehalf. ■BasicPartNumberofElement ●UNR1210(UN1210)×2elemen

UNR1210

SiliconNPNepitaxialplanartype

SiliconNPNepitaxialplanartype Fordigitalcircuits ■Features •Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts •Mtypepackageallowingeasyautomaticandmanualinsertionas wellasstand-alonefixingtotheprintedcircuitboard

URF1210

SwitchmodeFullPlasticDualUltrafastPowerRectifiers

VB1210

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®GenIIIPowerMOSFET •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC

VBA1210

N-Channel20V(D-S)MOSFET

VBA1210

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

VDA1210CTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein