RM450N100TL

Marking：TBD；Package：TOLL-8L；N-Channel Enhancement Mode MOSFET

Features Surface-mountedpackage Advancedtrenchcelldesign SuperTrench MSL1 BV≥100VPtot≤500WID≤450A RDS(ON)≤1.25mΩ@VGS=10V RDS(ON)≤1.85mΩ@VGS=6V

RM500N80TL

Marking：TBD；Package：TOLL-8L；N-Channel Enhancement Mode MOSFET

Features Surface-mountedpackage Advancedtrenchcelldesign SuperTrench MSL1 Tjmax175℃ BV≥80VPtot≤450WID≤500A RDS(ON)≤0.85mΩ@VGS=10V RDS(ON)≤1.25mΩ@VGS=6V

RSM4302A

Marking：TBD；High Efficiency, Non-Isolated, Fixed 4:1 Ratio, 1000W, Digital DC/DC Intermediate Bus Converter

Features 9.5to15VInputVoltageRange 38to60VOutputVoltageRange Upto1000WContinuousOutputPower Upto2000WTransientOutputPower Upto98.1%Efficiency ParallelOperationforMulti-kWArrays ConfigurationandMonitoringviaPMBus Auto-RecoveryModeforUVP,

RSM4302B

Marking：TBD；High Efficiency, Non-Isolated, Fixed 4:1 Ratio, 1000W, Digital DC/DC Intermediate Bus Converter

Features 9.5to15VInputVoltageRange 38to60VOutputVoltageRange Upto1000WContinuousOutputPower Upto2000WTransientOutputPower Upto98.1%Efficiency ParallelOperationforMulti-kWArrays ConfigurationandMonitoringviaPMBus Auto-RecoveryModeforUVP,

RSM92N650T7

Marking：TBD；Package：TO-247-3；N-Channel SiC Power MOSFET

Features HighBlockingVoltagewithLowOnResistance HighSpeedSwitchingwithLowCapacitance EasytoParallelandSimpletoDrive Benefits HigherSystemEfficiency ReducedCoolingRequirements IncreasedPowerDensity IncreasedSystemSwitchingFrequency

TB3R1D

Marking：TB3R1；Package：SOIC；QUAD DIFFERENTIAL PECL RECEIVERS

1FEATURES •Low-VoltageFunctionalReplacementsforthe AgereBRF1A,BRF2A,BRS2A,andBRS2B •Pin-EquivalenttoGeneralTrade26LS32 Devices •High-InputImpedanceApproximately8kΩ •3.5-nsMaximumPropagationDelay •TB3R1Provides50-mVHysteresis •TB3R2With-125-mVThresholdOffset

TB3R1D.B

Marking：TB3R1；Package：SOIC；QUAD DIFFERENTIAL PECL RECEIVERS

1FEATURES •Low-VoltageFunctionalReplacementsforthe AgereBRF1A,BRF2A,BRS2A,andBRS2B •Pin-EquivalenttoGeneralTrade26LS32 Devices •High-InputImpedanceApproximately8kΩ •3.5-nsMaximumPropagationDelay •TB3R1Provides50-mVHysteresis •TB3R2With-125-mVThresholdOffset

TB3R1D1G4.B

Marking：TB3R1；Package：SOIC；QUAD DIFFERENTIAL PECL RECEIVERS

1FEATURES •Low-VoltageFunctionalReplacementsforthe AgereBRF1A,BRF2A,BRS2A,andBRS2B •Pin-EquivalenttoGeneralTrade26LS32 Devices •High-InputImpedanceApproximately8kΩ •3.5-nsMaximumPropagationDelay •TB3R1Provides50-mVHysteresis •TB3R2With-125-mVThresholdOffset

TB3R1DR

Marking：TB3R1；Package：SOIC；QUAD DIFFERENTIAL PECL RECEIVERS

1FEATURES •Low-VoltageFunctionalReplacementsforthe AgereBRF1A,BRF2A,BRS2A,andBRS2B •Pin-EquivalenttoGeneralTrade26LS32 Devices •High-InputImpedanceApproximately8kΩ •3.5-nsMaximumPropagationDelay •TB3R1Provides50-mVHysteresis •TB3R2With-125-mVThresholdOffset

TB3R1DR.B

Marking：TB3R1；Package：SOIC；QUAD DIFFERENTIAL PECL RECEIVERS

1FEATURES •Low-VoltageFunctionalReplacementsforthe AgereBRF1A,BRF2A,BRS2A,andBRS2B •Pin-EquivalenttoGeneralTrade26LS32 Devices •High-InputImpedanceApproximately8kΩ •3.5-nsMaximumPropagationDelay •TB3R1Provides50-mVHysteresis •TB3R2With-125-mVThresholdOffset