20W STEREO (BTL) DIGITAL AMPLIFIER POWER STAGE

文件：2.90584 Mbytes 页数：27 Pages

TI

德州仪器

NPN SiGe RF POWER TRANSISTOR

NPN SiGe RF POWER TRANSISTOR The THN5601B is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-223 SMD package. The THN5601B can be used as a driver device or an output device, depending on the specific application. □ FEATURES o 4.8 Volt op

文件：89.73 Kbytes 页数：7 Pages

TACHYONICS

SiGe NPN Transistor

□ Features o 4.8 V operation o P1dB = 28 dBm at f = 900 MHz o GP = 8.5 dB at f = 900 MHz □ Applications o VHF and UHF band medium power amplifier

文件：224.85 Kbytes 页数：7 Pages

AUK

NPN SiGe RF POWER TRANSISTOR

文件：324.01 Kbytes 页数：11 Pages

TACHYONICS