首页 >TA7673P>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AutomaticBatteryBack-UpSwitch TheIntersilICL7673isamonolithicCMOSbatterybackupcircuitthatoffersuniqueperformanceadvantagesoverconventionalmeansofswitchingtoabackupsupply.TheICL7673isintendedasalow-costsolutionfortheswitchingofsystemsbetweentwopowersupplies;mainandbatterybackup.Them | Intersil Intersil Corporation | Intersil | ||
1310nmOPTICALCATV/ANALOGAPPLICATIONSInGaAsPMQW-DFBLASERDIODEMODULE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
LASERDIODE FEATURES •LownoiseRIN=ð155dB/HzMax. •LowdistortionCSO=ð55dBcMax. CTB=ð60dBcMax. •HighoutputpowerPf=16.0mW •LongwavelengthOP=1310nm •Highisolation40dB •InternalInGaAsmonitorPD •Internalthermoelectriccooler •Hermeticallysealed14pinbutterflyPac | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
LASERDIODE FEATURES •LownoiseRIN=ð155dB/HzMax. •LowdistortionCSO=ð55dBcMax. CTB=ð60dBcMax. •HighoutputpowerPf=16.0mW •LongwavelengthOP=1310nm •Highisolation40dB •InternalInGaAsmonitorPD •Internalthermoelectriccooler •Hermeticallysealed14pinbutterflyPac | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
1310nmOPTICALCATV/ANALOGAPPLICATIONSInGaAsPMQW-DFBLASERDIODEMODULE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
1310nmOPTICALCATV/ANALOGAPPLICATIONSInGaAsPMQW-DFBLASERDIODEMODULE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
LASERDIODE FEATURES •LownoiseRIN=ð155dB/HzMax. •LowdistortionCSO=ð55dBcMax. CTB=ð60dBcMax. •HighoutputpowerPf=16.0mW •LongwavelengthOP=1310nm •Highisolation40dB •InternalInGaAsmonitorPD •Internalthermoelectriccooler •Hermeticallysealed14pinbutterflyPac | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
30-A5-BitProgrammableIntegratedSwitchingRegulator | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
30-A5-BitProgrammableIntegratedSwitchingRegulator | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
30-A5-BitProgrammableIntegratedSwitchingRegulator | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 |
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