UPA1770G

SWITCHINGDUALP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION TheµPA1770isaP-channelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofportablemachines. FEATURES •Dualchiptype •Lowon-resistance RDS(on)1=37mΩMAX.(VGS=–4.5V,ID=–3.0A) RDS(on)2=39mΩMAX.(VGS=–4.0V,ID=–3.0A) R

VDX1770

DualE-PlaneTRLimiter

VSAB1770

MoldingPowerChoke

Outline: ▪AEC-Q200compliant ▪Magneticshieldedstructure:excellentresistancetoelectro Magmeticinterference(EMI) ▪Acompositestructure,ultralowbuzznoise ▪Lowloss,highefficiency,wideapplicationfrequency Features： ▪Corematerial:Alloypowder ▪Coreandwindingloss: See

WD1770

FloppyDiskController/Formatter