| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MoldedAxialInductor | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
DualAnalog-to-DigitalConverter | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
14-Bit,170MSPS/250MSPS,JESD204B,DualAnalog-to-DigitalConverter GENERALDESCRIPTION TheAD9250isadual,14-bitADCwithsamplingspeedsofupto250MSPS.TheAD9250isdesignedtosupportcommunicationsapplicationswherelowcost,smallsize,widebandwidth,andversatilityaredesired. FEATURES JESD204BSubclass0orSubclass1codedserialdigital | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
HIGHSENSITIVITYMICROPOWEROMNIPOLARHALL-EFFECTSWITCH | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
HIGHSENSITIVITYMICROPOWEROMNIPOLARHALL-EFFECTSWITCH | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DigitalRGB,IRandAmbientLightSensor | AVAGOAvago 安华高安华高科技 | AVAGO | ||
DigitalRGB,IRandAmbientLightSensor | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | BOARDCOM | ||
VoltageControlledOscillator | APITECH API Technologies Corp | APITECH | ||
14A,-200V,0.315Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
14A,-200V,0.315Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
14A,-200V,0.315Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
16A,-200V,0.300Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronha | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
16A,-200V,0.300Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronha | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
16A,-200V,0.300Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronha | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
15A,-200V,0.290Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
15A,-200V,0.290Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5V/1550nm/2.5Gb/sSignle-ModeGigabitInterfaceConverter(GBIC) | OPTOWAYOptoway Technology Inc 奥普薇科技奥普薇科技股份有限公司 | OPTOWAY | ||
TRANSISTORP-CHANNEL(BVdss=-200V,Rds(on)=0.315ohm,Id=-14A) InternationalRectifier’sRADHardHEXFET®technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEventEffects | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
2024+实力库存 |
SOP |
26 |
只做原厂渠道 可追溯货源 |
询价 | ||
TOSHIBA |
23+ |
SOP |
5500 |
现货,全新原装 |
询价 | ||
3000 |
自己现货 |
询价 | |||||
TOS |
22+ |
SMD |
7500 |
十年品牌!原装现货!!! |
询价 | ||
TOSHIBA/东芝 |
21+ |
SOP |
7540 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
TOSIHBA |
2023+ |
SOP |
3557 |
全新原厂原装产品、公司现货销售 |
询价 | ||
N/A |
SOP20 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
TOSHIBA/东芝 |
2021+ |
SOP20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
TOSHIBA |
23+ |
SOP |
355 |
询价 | |||
INFINEON |
17+ |
2200A,3000V/3200V,3400V, |
9888 |
全新进口原装,现货库存 |
询价 |
相关规格书
更多- T9842B
- TA1101B
- TA1215AN
- TA1221AF
- TA1243BF
- TA1244FN
- TA1251CF
- TA1270AF
- TA1270F
- TA1287F
- TA1340F
- TA2002F
- TA2003
- TA2003P
- TA2009F
- TA2020-020
- TA2024
- TA2040AF
- TA2041F
- TA2042F
- TA2057N
- TA2061AF
- TA2065F
- TA2068
- TA2078P
- TA2096F
- TA2099N
- TA2104BN
- TA2109F
- TA2111FN
- TA2112FN
- TA2119FN
- TA2123AF
- TA2132P
- TA2143AFN
- TA2145AF
- TA2153FN
- TA2157FN
- TA31002
- TA31033P
- TA31065FA
- TA31069N
- TA31081P
- TA31101AP
- TA31102F
相关库存
更多- T9934
- TA11850
- TA1217AN
- TA1229N
- TA1243CF
- TA1249F
- TA1254AF
- TA1270BF
- TA1276AN
- TA1323F
- TA14732B
- TA2002FN
- TA2003F
- TA2008AN
- TA2011S
- TA2022AFN
- TA2028F
- TA2040AP
- TA2041N
- TA2056FN
- TA2058F
- TA2063F
- TA2066F
- TA2068N
- TA2092N
- TA2096FN
- TA2104AN
- TA2106FN
- TA2111F
- TA2111N
- TA2119AFN
- TA2120FN
- TA2131FL
- TA2140FN
- TA2143FN
- TA2147F
- TA2157F
- TA31001P
- TA31002P
- TA31065F
- TA31065N
- TA31081F
- TA31086F
- TA31101F
- TA31103F
