T6A80

6.0A Standard Rectifier

6.0AStandardRectifier Features •LowForwardVoltageDrop •LowReverseLeakage •HighSurgeCurrentCapability •HighReliability •HighTemperatureSolderingGuaranteed260°C/10seconds/.375(9.5mm)leadlength,5lbs(2.3kg)tension •RoHScompliant

T6A80G

6.0A Glass Passivated Rectifier

6.0AGlassPassivatedRectifier Features •LowForwardVoltageDrop •HighCurrentCapability •HighSurgeCurrentCapability •HighReliability •HighTemperatureSolderingGuaranteed260°C/10seconds/.375(9.5mm)leadlength,5lbs(2.3kg)tension •RoHScompliant

T6A80L

6.0 AMP SILICON RECTIFIER

[TAITRON] Features •Lowforwardvoltagedrop •highcurrentcapability •Highforwardsurgecurrentcapability •Highreliability •Hightemperaturesolderingguaranteed260°C/10seconds/.375(9.5mm)leadlength,5lbs(2.3kg)tension •RoHScompliant

T6A80L

6.0 Amp Silicon Rectifiers

Features •Lowforwardvoltagedrop •highcurrentcapability •Highforwardsurgecurrentcapability •Highreliability •Hightemperaturesolderingguaranteed260°C/10seconds/.375(9.5mm)leadlength,5lbs(2.3kg)tension •RoHScompliant

TK6A80E

MOSFETsSiliconN-ChannelMOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=1.35Ω(typ.) (2)Lowleakagecurrent:IDSS=10μA(max)(VDS=640V) (3)Enhancementmode:Vth=2.5to4.0V(VDS=10V,ID=0.6mA)

TK6A80E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.7Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

VSIB6A80

Single-PhaseSingleIn-LineBridgeRectifiers

FEATURES •ULrecognitionfilenumberE54214 •Thinsinglein-linepackage •Glasspassivatedchipjunction •Highsurgecurrentcapability •Highcasedielectricstrengthof1500VRMS •Solderdip260°C,40s •ComponentinaccordancetoRoHS2002/95/EC andWEEE2002/96/EC TYPICALAPP

VSIB6A80

Single-PhaseSingleIn-LineBridgeRectifiers