首页 >T6006F>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
4BitDigitalAttenuator | SPECTRUM Spectrum Instrumentation GmbH | SPECTRUM | ||
4BitDigitalAttenuatorFastSwitchingSpeed:20ns(GaAs) | APITECH API Technologies Corp | APITECH | ||
SCR FEATURES =HIGHSURGECAPABILITY »HIGHON-STATECURRENT »HIGHSTABILITYANDRELIABILITY DESCRIPTION TheTL1006--->TL8006FamilyofSiliconCon- trolledRectifiersusesahighperformanceglass passivatedtechnology. ThisgeneralpurposeFamilyofSiliconControlled Rectifiersis | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-Channel30V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •LowOn-Resistance •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters,HighSpeedSwitching | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
N-Ch60VFastSwitchingMOSFETsAdvancedhighcelldensityTrenchtechnology | UNITPOWER Unitpower Technology Limited | UNITPOWER | ||
N-Ch60VFastSwitchingMOSFETs | UNITPOWER Unitpower Technology Limited | UNITPOWER | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-Ch60VFastSwitchingMOSFETs | XINDEYI ShenZhen XinDeYi Electronics Co., Ltd. | XINDEYI | ||
PINDIODE DESCRIPTION TheseseriesofPINdiodesaredesignedforapplicationsrequiringsmallpackagesizeandmoderateaveragepowerhandlingcapability.ThelowcapacitanceoftheUM6000andUM6600allowsthemtobeusedasseriesswitchingelementsto1GHz.ThelowresistanceoftheUM6200isuseful | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
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