RF Power Field Effect Transistor

880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applica

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FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Tantalum, MnO2 Tantalum, T491, 10 uF, 10, 35 V, 7343, SMD, MnO2, Molded, 1 Ohms, Height Max = 3.1mm

PRODUCT DESCRIPTION KEMET’s family of solid tantalum chip capacitors is designed and manufactured with the demanding requirements of surface mount technology in mind. These devices extend the advantages of solid tantalum technology to today’s surface mount circuit applications. Complementing mul

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KEMETKEMET Corporation

基美

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

文件：1.19064 Mbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

文件：1.4439 Mbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：457.66 Kbytes 页数：13 Pages

恩XP

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：1.47981 Mbytes 页数：18 Pages

恩XP

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：1.0447 Mbytes 页数：19 Pages

恩XP

RF Power LDMOS Transistor

文件：489.23 Kbytes 页数：16 Pages

恩XP

RF Power Field Effect Transistor

文件：748.8 Kbytes 页数：11 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：1.19064 Mbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体