T431616B-10C中文资料凯钰科技数据手册PDF规格书

GRNERAL DESCRIPTION

The T431616B is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology . Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clockcycle . Range of operating frequencies , programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth , high performance memory system applications.

FEATURES

• +2.7 to +3.6V power supply

• Dual banks operation

• LVTTL compatible with multiplexed address

• All inputs are sampled at the positive going edge of system clock

• Burst Read Single-bit Write operation

• DQM for masking

• Auto refresh and self refresh

• 32ms refresh period (2K cycle)

• MRS cycle with address key programs

- CAS Latency ( 1 & 2 & 3 )

- Burst Length ( 1 , 2 , 4 , 8 & full page)

- Burst Type (Sequential & Interleave)

• Available package type in 50 pin TSOP(II) and 60-pin CSP