BTT3050EJXUMA1

Marking：T3050EJ；Package：PG-TDSO-8；Smart low-side power switch

Features •Singlechanneldeviceoptimizedfor24Vapplications •Electrostaticdischargeprotection(ESD) •Overcurrent,activeclampingandovertemperatureprotection •Overtemperaturelatchshutdown •Supplypinundervoltageprotection •Dedicatedstatussignal •Slew-ratecontroltoad

DMHT3006LFJ-13

Marking：T306LJ；Package：V-DFN5045-12；30V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE

Features LowOn-Resistance LowInputCapacitance TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Applications High-EfficiencyBridgeRectifiers

DMT31M7LPS-13

Marking：T31M7LS；Package：PowerDI5060-8；N-CHANNEL ENHANCEMENT MODE MOSFET

FeaturesandBenefits LowRDS(ON)–MinimizesOn-StateLosses ExcellentQgdxRDS(ON)Product(FOM) AdvancedTechnologyforDC-DCConverters SmallFormFactorThermallyEfficientPackageEnablesHigher DensityEndProducts 100UnclampedInductiveSwitching–EnsuresMoreReliabilit

DMT31M7LSS-13

Marking：T31M7LS；Package：SO-8；N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance RDS(ON))yetmaintainsuperiorswitchingperformance,makingitideal forhighefficiencypowermanagementapplications. Backlighting PowerManagementFunctions DC-DCConverters FeaturesandBenefits

DMT32M5LPS-13

Marking：T32M5LS；Package：PowerDI5060-8；30V N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisnewgenerationMOSFETisdesignedtominimizeRDS(ON)yet maintainsuperiorswitchingperformance.Thisdeviceisidealforuse inpowermanagementandloadswitch. DC-DCconverters Loadswitches Features ThermallyEfficientPackage-CoolerRunningA

DMT34M1LPS-13

Marking：T34M1LS；Package：PowerDI5060-8；N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON))andyetmaintainsuperiorswitchingperformance,makingit idealforhighefficiencypowermanagementapplications. Backlighting PowerManagementFunctions DC-DCConverters Featuresan

DMT36M1LPS-13

Marking：T36M1LS；Package：PowerDI5060-8；N-CHANNEL ENHANCEMENT MODE MOSFET

FeaturesandBenefits LowRDS(ON)–MinimizesOn-StateLosses ExcellentQgdxRDS(ON)Product(FOM) AdvancedTechnologyforDC-DCConverters SmallFormFactorThermallyEfficientPackageEnablesHigher DensityEndProducts 100UnclampedInductiveSwitching–EnsuresMoreReliabilit

ISOTMP35BDFQR

Marking：T35；Package：SOIC；ISOTMP35 ±1.2°C, 3-kVRMS Isolated Temperature Sensor With Analog Output With Seconds Response Time and 500VRMS Working Voltage

1Features •Robustintegratedisolationbarrier: –Withstandisolationvoltage:3000VRMS –Isolationworkingvoltage:500VRMS •Isolationbarrierlife:>50years •Temperaturesensoraccuracy –±0.5°Ctypicalat25°C –±1.2°Cmaximumfrom0°Cto70°C –±2.5°Cmaximumfrom–40°Cto150°C

ISOTMP35BEDFQRQ1

Marking：T3Q；Package：SOIC；ISOTMP35-Q1 Automotive ±1.5°C, 3-kVRMS Isolated Temperature Sensor With Analog Output With Seconds Response Time and 500VRMS Working Voltage

1Features •AEC-Q100qualifiedwith: –Temperaturegrade0:–40°Cto150°CAmbient OperatingTemperatureRange –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC5 •FunctionalSafety-Capable ––Documentationavailabletoaidfunctional safetysystemdesign •

N34TS04MT3ETG

Marking：T34；Package：TDFN8；Digital Output Temperature Sensor with On-board SPD EEPROM

Description TheN34TS04isacombinationTemperatureSensor(TS)and4−Kb ofSerialPresenceDetect(SPD)EEPROM,whichimplementsthe JEDECTSE2004avDDR4specificationandsupportstheStandard (100kHz),Fast(400kHz)andFastPlus(1MHz)I2Cprotocols. TheTSmeasurestemperatureatlea