T2G6003028-FL

30 W, 28V DC – 6 GHz, GaN RF Power Transistor

KeyFeatures •Frequency:DCto6GHz •OutputPower(P3dB):42.7W •LinearGain:>14dB •OperatingVoltage:28V •Lowthermalresistancepackage •Pulsecapable

T2G6003028-FL

DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor; • Frequency: DC to 6 GHz\n• Output power (P3dB): 30 W at 6 GHz\n• Linear gain: >14 dB at 6 GHz\n• Operating voltage: 28 V\n• Low thermal resistance package\n;

Qorvo's T2G6003028-FL is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.\nLead-free and ROHS compliant\nEvaluation boards are available upon request.\n

T2G6003028-FS

30 W, 28V DC ??6 GHz, GaN RF Power Transistor

KeyFeatures1 •Frequency:DCto6GHz •OutputPower(P3dB):42.7W •LinearGain:>14dB •OperatingVoltage:28V •Lowthermalresistancepackage •Pulsecapable Note1:@3GHz

T2G6003028-FS_V01

30 W, 28V DC ??6 GHz, GaN RF Power Transistor

KeyFeatures1 •Frequency:DCto6GHz •OutputPower(P3dB):42.7W •LinearGain:>14dB •OperatingVoltage:28V •Lowthermalresistancepackage •Pulsecapable Note1:@3GHz

T2G6003028-FSEVB

30 W, 28V DC ??6 GHz, GaN RF Power Transistor

KeyFeatures1 •Frequency:DCto6GHz •OutputPower(P3dB):42.7W •LinearGain:>14dB •OperatingVoltage:28V •Lowthermalresistancepackage •Pulsecapable Note1:@3GHz

T2G6003028-FSEVB

30 W, 28V DC – 6 GHz, GaN RF Power Transistor

KeyFeatures •Frequency:DCto6GHz •OutputPower(P3dB):42.7W •LinearGain:>14dB •OperatingVoltage:28V •Lowthermalresistancepackage •Pulsecapable

T2G6003028-FSEVB2

30 W, 28V DC ??6 GHz, GaN RF Power Transistor

KeyFeatures1 •Frequency:DCto6GHz •OutputPower(P3dB):42.7W •LinearGain:>14dB •OperatingVoltage:28V •Lowthermalresistancepackage •Pulsecapable Note1:@3GHz

T2G6003028-FSEVB2

30 W, 28V DC – 6 GHz, GaN RF Power Transistor

KeyFeatures •Frequency:DCto6GHz •OutputPower(P3dB):42.7W •LinearGain:>14dB •OperatingVoltage:28V •Lowthermalresistancepackage •Pulsecapable

T2G6003028-FL

30W, 28V DC 6 GHz, GaN RF Power Transistor

T2G6003028-FL_15

30W, 28V DC 6 GHz, GaN RF Power Transistor