10W, 32V, DC 6 GHz, GaN RF Power Transistor

文件：1.12445 Mbytes 页数：13 Pages

TriQuint

10W, 32V, DC 6 GHz, GaN RF Power Transistor

文件：1.12445 Mbytes 页数：13 Pages

TriQuint

10W, 32V, DC 6 GHz, GaN RF Power Transistor

文件：1.12445 Mbytes 页数：13 Pages

TriQuint

DC - 6 GHz, 10 Watt, 32 V GaN RF Power Transistor

Qorvo's T1G6001032-SM is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC - 6GHz and a 32V supply rail. The device is in an air cavity QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test i ·Frequency: DC to 6 GHz\n ·Output power (P3dB): 10 W Peak at 3.1 GHz\n ·Linear gain: 19 dB at 3.1 GHz\n ·Operating voltage: 32 V\n ·Low thermal resistance package;

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