120W Peak Power, 24W Average Power, 36V DC ??3.5 GHz, GaN RF Power Transistor

文件：987.76 Kbytes 页数：13 Pages

TriQuint

120W Peak Power, 24W Average Power, 36V DC ??3.5 GHz, GaN RF Power Transistor

文件：987.76 Kbytes 页数：13 Pages

TriQuint

120W Peak Power, 24W Average Power, 36V DC ??3.5 GHz, GaN RF Power Transistor

文件：993.83 Kbytes 页数：13 Pages

TriQuint

120W Peak Power, 24W Average Power, 36V DC ??3.5 GHz, GaN RF Power Transistor

文件：987.76 Kbytes 页数：13 Pages

TriQuint

DC - 3.5 GHz, 120 Watt, 36 - 50 V GaN RF Power Transistor

Qorvo's T1G4012036-FS is a 120 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 36-50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio commun • Frequency: DC to 3.5 GHz\n• Output power (P3dB): 120 W at 3.3 GHz\n• Linear gain: 16 dB at 3.3 GHz\n• Operating voltage: 36 - 50 V\n• Low thermal resistance package;

Qorvo

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