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Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz

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Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz

Description The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band. They feature input matching, high efficiency, and thermallyenhanced packages. Features • GaN on SiC HEMT technology • Input matched • Ty

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Thermally-Enhanced High Power RF GaN on SiC HEMT 600 W, 50 V, 1200 ??1400 MHz

文件：615.07 Kbytes 页数：9 Pages

Cree

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