TF105

1.0AFastRecoveryRectifier

[TAITRONCOMPONENTSINCORPORATED] Features •Lowforwardvoltagedrop •Highcurrentcapability •Highreliability •Highsurgecurrentcapability •Hightemperaturesolderingguaranteed:250°C/10seconds/.0375(9.5mm)leadlength,5lbs(2.3kg)tension •RoHSCompliance

TF105

1.0AFastRecoveryRectifier

1.0AFastRecoveryRectifier Features •Lowforwardvoltagedrop •Highcurrentcapability •Highreliability •Highsurgecurrentcapability •Hightemperaturesolderingguaranteed:250°C/10seconds/.0375(9.5mm)leadlength,5lbs(2.3kg)tension •RoHSCompliance

TF105G

1.0AFastRecoveryRectifier

TG-105

HIGHENERGYSPARKGAPDEVICES

DESCRIPTION CPClare’sTGLegacySeriesoftwoelectrodesparkgapsexcelinapplicationsthatrequiretheefficienttransferofhighvoltage,highenergypulsesandDCovervoltageprotectionformagnetrons,diodes,capacitors,etc.TheTGLegacySeriesalsoincludesthreeelectrodetriggeredsp

TGV105NP

SingleGang13AOutdoorRCDFusedSpur-Passive

Features&Benefits AutomaticallydisconnectsbothLiveandNeutral connectionsleavingEarthconnectionintact. DualFlagTechnologyprovidesaddedprotection againsttherisksofelectrocution Contactsremainlatchedwhenpowersupply istemporarilylost MeetslatestIETwiringregulation

THS105

GaAsIONIMPLANTEDPLANARTYPE

HIGHSTABILITYMOTORCONTROL.ENERGYSAVINGFORCOOLINGFANMOTOR.DIGITALTACHOMETER.CRANKSHAFTPOSITIONSENSOR. FEATURES .ExcellentTemperatureCharacteristics. •WideOperatingTemperatureRangeCapabilitv, (;-55°C~+125°C) .ExcellentOutputVoltageLinearity. (;upto15kGausses)

TI-105

Pulsetransformars

TIP105

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheTIP102isasiliconEpitaxial-BaseNPNpowertransistorinmonolithicDarlingtonconfigurationmountedinTO-220plasticpackage.Itisintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypeisTIP107. AlsoTIP105isaPNPtype. ■STMicroelectro

TIP105

PNPSILICONPOWERDARLINGTONS

●DesignedforComplementaryUsewithTIP100,TIP101andTIP102 ●80Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MaximumVCE(sat)of2.5VatIC=8A

TIP105

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

PlasticMedium−PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)−