74HCT3G04DC-Q100

Marking：T04；Package：VSSOP8；Triple inverter

74HCT3G04DP-Q100

Marking：T04；Package：TSSOP8；Triple inverter

NC7ST04P5X

Marking：T04；Package：MAA05A；TinyLogic HST Inverter

QST4

Marking：T04；Package：TSMT6；Low frequency amplifier

US6T4

Marking：T04；Package：TUMT6；Low frequency amplifier

FT04N15E

Marking：T04N15；Package：SOT-223；Plastic-Encapsulate MOSFETS

GENERALDESCRIPTION Thisuseadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. canbeusedinawidevarietyofapplications. FEATURE HighdensitycelldesignforultralowRDS(ON) Fullycharacterizedavalanchevoltageandcurrent Excellentpackag

T0435NF1-F1-B

Marking：T0435NF1；Package：TO-220MF-K1；TRIACS

APPLICATIONS ACswitching Phasecontrol FEATURES Glass-passivatedmesa chipforreliabilityand uniform Uniformgatetrigger currentsinthree quadrants RoHSproducts

FTK04N15T

Marking：T04N15151；Package：SOT-223；N -Channel Power MOSFET

NTH4LN040N65S3H

Marking：T040N65S3H；Package：TO-247L4；MOSFET - Power, N-Channel, SUPERFET III, FAST 650 V, 40 m, 62 A

NTHL041N60S5H

Marking：T041N60S5H；Package：TO-247；MOSFET - Power, Single N-Channel, SUPERFET V, FAST, TO247-3L 600 V, 41 m, 57 A