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2STR1160

Lowvoltagefast-switchingNPNpowertransistor

Description ThedeviceinaNPNtransistormanufacturedusingnew“PB-HCD”(PowerBipolarHighCurrentDensity)technology.Theresultingtransistorshowsexceptionalhighgainperformancescoupledwithverylowsaturationvoltage. ThecomplementaryPNPisthe2STR2160. Features •Verylowcol

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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