TRF1108

TRF1108DCto12GHzBandwidth,DifferentialtoSingle-EndedRFAmplifier

1Features •Excellentdifferential-to-single-endedRF performance •Bandwidth(3dB):12GHz •Powergain:15.5dB •OP1dB: –2GHz:12dBm –6GHz:9.8dBm •OIP3: –2GHz:28dBm –6GHz:30dBm •Noisefigure(NF)andinputnoisespectraldensity: –2GHz:11dBand–163dBm/Hz –6GHz:11.4dBa

TRF1108

TRF1108Near-DCto8GHz,DifferentialtoSingle-EndedRFAmplifier

1Features •Differential-to-single-ended(D2S)RFamplifier •Near-DCto8GHz •Gain:15.5dBat2GHz •OP1dB: –2GHz:12dBm –6GHz:10dBm •OIP3: –2GHz:28dBm –6GHz:28.5dBm •Noisefigure(NF)andinputnoisespectraldensity: –2GHz:11dBand–163dBm/Hz –6GHz:11.5dBand–162.5dB

TRF1108RPVR

TRF1108Near-DCto8GHz,DifferentialtoSingle-EndedRFAmplifier

1Features •Differential-to-single-ended(D2S)RFamplifier •Near-DCto8GHz •Gain:15.5dBat2GHz •OP1dB: –2GHz:12dBm –6GHz:10dBm •OIP3: –2GHz:28dBm –6GHz:28.5dBm •Noisefigure(NF)andinputnoisespectraldensity: –2GHz:11dBand–163dBm/Hz –6GHz:11.5dBand–162.5dB

TS1108

Portable/Battery-PoweredSystems

TZ1108A

SMD5.0x3.221.1416MHzCrystalUnit

Features: SurfaceMountSeamWeldPackage ExcellentAging GoodFrequencyPerturbationandStabilityoverTemperature DescriptionandApplications: Surfacemount5.0mmx3.2mmcrystalunitforuseinwirelesstelecommunicationsdevices, especiallyforaneedofultraminiaturepackageformob

UC1108

LOW-POWEROFF-LINEPRIMARYSIDEREGULATIONCONTROLLER

UM1108

25to30WattDC-DCConverters

VBA1108S

N-Channel100-V(D-S)SuperTrenchPowerMOSFET

APPLICATIONS •DC/DCPrimarySideSwitch •Telecom/Server •MotorDriveControl •SynchronousRectification FEATURES •SuperTrenchtechnologyPowerMOSFET •ExcellentgatechargexRds(on)product(FOM) •Verylowon-resfistanceRds(on) •100RgandUISTested

VTF1108BX

Conformal,SingleIn-LineResistorNetworks(Standard)