SY10EL11V集成电路（IC）的时钟缓冲器驱动器规格书PDF中文资料

DESCRIPTION

The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for those applications which require the ultimate in AC performance.

The differential inputs of the EL11V employ clamping circuitry to maintain stability under open input conditions. If the inputs are left open (pulled to VEE), the Q outputs will go LOW.

FEATURES

■ 3.3V and 5V power supply options

■ 265ps propagation delay

■ 5ps skew between outputs

■ High bandwidth output transitions

■ Internal 75KΩ input pull-down resistors

■ Replaces SY10/100EL11

■ Improved output waveform characteristics

■ Available in 8-pin SOIC package