LASER DIODE DRIVER WITH INPUT D FLIP-FLOP

DESCRIPTION The SY100EL1001 is a high speed current source for driving a semiconductor laser diode in optical transmission applications. The output current modulation is DC – voltage controlled. The integrated circuit contains the following functional blocks: • Input Line Receiver • D F

文件：92.92 Kbytes 页数：6 Pages

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LASER DIODE DRIVER WITH OUTPUT ENABLE

DESCRIPTION The SY100EL1003 is a high speed current source for driving a semiconductor laser diode in optical transmission applications. The output current modulation is DC – voltage controlled. The modulation current is disabled when output enable is HIGH. FEATURES ■ Up to 1.25Gbps operation

文件：92.6 Kbytes 页数：6 Pages

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LASER DIODE DRIVER WITH OUTPUT ENABLE

DESCRIPTION The SY100EL1003 is a high speed current source for driving a semiconductor laser diode in optical transmission applications. The output current modulation is DC – voltage controlled. The modulation current is disabled when output enable is HIGH. FEATURES ■ Up to 1.25Gbps operation

文件：92.6 Kbytes 页数：6 Pages

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LASER DIODE DRIVER WITH OUTPUT ENABLE

DESCRIPTION The SY100EL1003 is a high speed current source for driving a semiconductor laser diode in optical transmission applications. The output current modulation is DC – voltage controlled. The modulation current is disabled when output enable is HIGH. FEATURES ■ Up to 1.25Gbps operation

文件：92.6 Kbytes 页数：6 Pages

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5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER

DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho

文件：52.76 Kbytes 页数：5 Pages

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5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER

DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho

文件：59.98 Kbytes 页数：5 Pages

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5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER

DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho

文件：59.98 Kbytes 页数：5 Pages

Micrel

麦瑞半导体

5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER

DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho

文件：52.76 Kbytes 页数：5 Pages

Micrel

麦瑞半导体

5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER

DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho

文件：59.98 Kbytes 页数：5 Pages

Micrel

麦瑞半导体

5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER

DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho

文件：52.76 Kbytes 页数：5 Pages

Micrel

麦瑞半导体