5-2000 MHz Medium Power GaAsHBT Amplifier

Product Description Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and co

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STANFORD

5-2000 MHz medium power GaAs HBT amplifier. High 3rd order intercept: 39 dBm typ. at 1960 MHz.

Stanford Microdevices

HIGH ENERGY SPARK GAP DEVICES

DESCRIPTION CP Clare’s TG Legacy Series of two electrode sparkgaps excel in applications that require the efficient transfer of high voltage, high energy pulses and DC overvoltage protection for magnetrons, diodes, capacitors, etc. The TG Legacy Series also includes three electrode triggered sp

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CLARE

Clare, Inc.

Hi-Reliability Voltage Controlled Crystal Oscillator

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VECTRON