SXESDHC2FD2VB中文资料瞬芯半导体数据手册PDF规格书

描述 Description

The SXESDHC2FD2VB protects sensitive semiconductor components

from damage or upset due to electrostatic discharge (ESD) and other

voltage induced transient events. They feature large cross-sectional area

junctions for conducting high transient currents, offer desirable electrical

characteristics for board level protection, such as fast response time, low

operating voltage.

Feature

300W peak pulse power per line (tP = 8/20μs)

DFN1006-2L package

Replacement for MLV (0402)

Bidirectional configurations

Response time is typically < 1ns

Low clamping voltage

Transient protection for data lines to

IEC61000-4-2(ESD) ±30kV(air), ±30kV(contact);

IEC61000-4-4 (EFT) 40A (5/50ns)

Applications

Cellular phones

Portable devices

Digital cameras

Power supplies