SXA389Z数据手册Qorvo中文资料规格书

描述 Description

Qorvo's SXA389Z amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400MHz to 2500MHz cellular, ISM, WLL, PCS, W-CDMA applications.

特性 Features

• On-Chip Active Bias Control, Single 5V Supply
• High Output 3rd Order Intercept:+42 to +44dBm Typical
• High P1dB :+25dBm Typical
• High Gain:+19dB at 850MHz
• High Efficiency: Consumes Only 600mW
• Surface-Mountable Power Plastic Package