SXA389BZ数据手册Qorvo中文资料规格书

描述 Description

Qorvo's SXA389BZ amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400MHz to 2500MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.

特性 Features

• Lower RTH for increased MTTF
• On-Chip Active Bias Control
• Single 5V Supply
• Excellent Linearity: +43dBm typical OIP3 at 1960MHz
• High P1dB +25dBm Typical
• High Gain:+18.5dB at 850MHz
• Efficient: Consumes Only 575mW