20V N-Channel Enhancement Mode MOSFET

Description The SX2300MI uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =4.5A RDS(ON)

文件：884.33 Kbytes 页数：5 Pages

SXSEMI

瞬芯半导体

CCD LINEAR IMAGE SENSOR

文件：558.84 Kbytes 页数：14 Pages

TOSHIBA

东芝

DUAL HOT SWAP POWER CONTROLLER WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

文件：422.89 Kbytes 页数：22 Pages

TI

德州仪器

DUAL HOT SWAP POWER CONTROLLER WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

文件：422.89 Kbytes 页数：22 Pages

TI

德州仪器