CEG2187D

DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-6.5A,RDS(ON)=18mW@VGS=-4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TSSOP-8forSurfaceMountPackage. RoHScompliant. RDS(ON)=24mW@VGS=-2.5V.

CEM2187

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-7.6A,RDS(ON)=22mΩ@VGS=-4.5V. RDS(ON)=32mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CM2187

T-13/4WireTerminal(standard)

T-13/4WireTerminal(standard)

DMF2187

SiliconBeam-LeadandChipSchottkyBarrierMixerDiodes

DS2187

ReceiveLineInterface

DESCRIPTION TheDS2187T1/CEPTReceiveLineInterfacechipinterfacesuserequipmenttoNorthAmerican(T11.544MHz)andEuropean(CEPT2.048MHz)primaryratecommunicationnetworks.Thedeviceextractsclockanddatafromtwistedpairorcoaxtransmissionmediaandeliminatesexpensivediscret

DS2187

ReceiveLineInterface

HAT2187WP

SiliconNChannelPowerMOSFETPowerSwitching

HAT2187WP-EL-E

SiliconNChannelPowerMOSFETPowerSwitching

HPF2187LB

HighPowerPoESignalPathMagnetics

HPF2187LC

HighPowerPoESignalPathMagnetics