N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

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SEMIPOWER

芯派科技

N-channel MOSFET

General Description\nThis power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is us ■ High ruggedness\n■ RDS(ON) (Max 1.3 Ω)@VGS=10V\n■ Gate Charge (Typ 38nC)\n■ Improved dv/dt Capability\n■ 100% Avalanche Tested;

Semipower

芯派科技

N-Channel MOSFET

文件：750.36 Kbytes 页数：7 Pages

WISDOM

Silicon N-Channel MOSFET

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WINSEMIShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

N-Channel MOSFET

Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 40nC (Typ.) □ BVDSS=600V,ID=7A □ RDS(on) :1.2 Ω (Max) @VG=10V □ 100 Avalanche Tested

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WISDOM