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F6N80

Ultralowgatecharge

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

F6N80

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

F6N80

AdvancedMOSFETprocesstechnology

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微电子新硅能微电子(苏州)有限公司

F6N80

AdvancedPowerMOSFET(220V,2.0OHM,4.5A)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

F6N80

800VN-ChannelMOSFET

Good-Ark

GOOD-ARK Electronics

F6N80

N-ChannelQFET짰MOSFET800V,5.5A,2.5廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA6N80

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA6N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6.3A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQAF6N80

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQAF6N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=4.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
Easy
22+
NA
168
加我QQ或微信咨询更多详细信息,
询价
PULSAR
20+
50
每一片来自原厂!
询价
Pulsar
99
询价
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
SINK
2016+
QFP
6523
只做原装正品现货!或订货!
询价
SINK
2447
QFP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
只做原装
24+
QFP
36520
一级代理/放心采购
询价
L3 NARDA-MITEQ
22+
NA
500000
万三科技,秉承原装,购芯无忧
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更多SW6N80D供应商 更新时间2025-5-20 10:08:00