低压MOSFET

1. Gate 2. Drain 3. Source\n\nThis power MOSFET is produced with advanced technology of SAMWIN.\n\nThis technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. • High ruggedness\n• Low Gate Charge(Typ 48nC)\n• 100% Avalanche Tested\n• Application: Synchronous Rectification, Li Battery Protect Board, Inverter.;

Semipower

芯派科技

N-channel Enhanced mode TO-252/TO-220 MOSFET

文件：744.05 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

monolithisch integrierte schaltung monolithic integrated circuit

文件：289.33 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

GaAs Infrared Emitting Diodes in 5 mm (T-13/4)Package

Description TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue–grey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistors. Features ● Low cost emitter ● Low forward voltage ● High radiant p

文件：86.66 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

HIGH SIDE SMART POWER SOLID STATE RELAY

DESCRIPTION The VN540, VN540SP, VN540(011Y), VN540(012Y) is a monolithic device designed in STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to ground. Active current limitation avoids the system power supply dropping in case of shor

文件：85.93 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体