N-channel Enhanced mode TO-220F MOSFET

文件：651.15 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

高压MOSFET

Semipower

芯派科技

POLARHV HIPERFET POWER MOSFET

DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9A * Ul

文件：143.41 Kbytes 页数：3 Pages

UTC

友顺

600V N-CHANNEL POWER MOSFET

文件：147.42 Kbytes 页数：3 Pages

UTC

友顺

Fast Switching

• FEATURES • Drain Current ID= 18A@ TC=25℃ • Drain Source Voltage : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) • Fast Switching • APPLICATIONS • Switch mode power supply.

文件：61.05 Kbytes 页数：2 Pages

ISC

无锡固电