丝印：SVT1040；Package：SOP-8-225-1.27；10A, 40V N-CHANNEL MOSFET

DESCRIPTION SVT1040SA is an N-channel enhancement mode power MOS field effect transistor which is produced using Trench Mos technology. The improved trench stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switchin

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丝印：SVT1040；Package：SOP-8-225-1.27；10A, 40V N-CHANNEL MOSFET

DESCRIPTION SVT1040SA is an N-channel enhancement mode power MOS field effect transistor which is produced using Trench Mos technology. The improved trench stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switchin

文件：283.57 Kbytes 页数：8 Pages

SILAN

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低压MOS功率管

SVT1040SA  N沟道增强型功率MOS场效应晶体管采用Trench Mos 工艺技术制造。先进的工艺及原胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于不间断电源，DC-DC电源转换器。 • 10A，40V，RDS(on)（典型值）=15mW@VGS=10V\n• 低栅极电荷量\n• 低反向传输电容\n• 开关速度快 \n• 提升了dv/dt 能力;

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ALTERNISTORS

DESCRIPTION The TODV 640 ---> 1240 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) FEATURES ■ HIGH COMMUTATION :

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ALTERNISTORS

Description The TPDVxx40 series use a high performance alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) Features ■ On-state current (IT(RMS)): 40 A ■ Max. bl

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40A SCRs

DESCRIPTION The TYNx40 series is suitable for applications where in-rush current conditions are critical, such as overvoltage crowbar protection circuits in power supplies, in-rush current limiting circuits, solid state relays (in back to back configuration), welding equipment, high power motor c

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