68V N-Channel Power Mosfet

General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 68V,ID =88A RDS(ON),6.3mΩ(Typ) @ VGS =10V Low On-Resistance Low gate charge Fast sw

文件：1.01617 Mbytes 页数：7 Pages

UMW

友台半导体

88A, 68V N-CHANNEL MOSFET

DESCRIPTION The SVT078R0NT/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Thi

文件：279.49 Kbytes 页数：7 Pages

SILAN

士兰微

88A, 68V N-CHANNEL MOSFET

DESCRIPTION The SVT078R0NT/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Thi

文件：279.49 Kbytes 页数：7 Pages

SILAN

士兰微

88A, 68V N-CHANNEL MOSFET

DESCRIPTION The SVT078R0NT/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Thi

文件：279.49 Kbytes 页数：7 Pages

SILAN

士兰微