SVINJM4559DS

BLOCK DIAGRAM OF ICS

•ThisisthebasicblockdiagramoftheinsidecircuitofIC.Inan actualcircuit,theremaybesometimesidleterminalsorsomedifferent functionsotherthanthebasiccircuit

4559

SINGLE-CHIP4-BITCMOSMICROCOMPUTER

ACE4559P

150mASingleCellLi-ionBatteryCharger,0.1mATermination,45nABatteryleakageCurrent

AZ4559

DUALBIPOLAROPERATIONALAMPLIFIERS

AZ4559M

DUALBIPOLAROPERATIONALAMPLIFIERS

AZ4559MTR

DUALBIPOLAROPERATIONALAMPLIFIERS

AZ4559P

DUALBIPOLAROPERATIONALAMPLIFIERS

CHM4559JPT

DualEnhancementModeFieldEffectTransistor

N-channel:VOLTAGE60VoltsCURRENT4.5Ampere P-channel:VOLTAGE60VoltsCURRENT3.5Ampere FEATURE ​​​​​​​*Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *S

CJQ4559

NChannelPChannelMosfet

CTP4559

ToroidalInductorsMediumCurrent

FDS4559

60VComplementaryPowerTrenchMOSFET

GeneralDescription ThiscomplementaryMOSFETdeviceisproducedusingFairchild’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features •Q1:N-Channel 4.5A,60V

FDS4559-NL

N-andP-Channel60-V(D-S)MOSFET

FTK4559

SuperHighDensityCellDesignforExtremelyLowRDS(ON)

JRC4559

DUALOPERATIONALAMPLIFIER?

KDS4559

60VComplementaryPowerTrenchMOSFET

Features ●N-Channel 4.5A,60VRDS(ON)=55m@VGS=10V RDS(ON)=75m@VGS=4.5V ●P-Channel -3.5A,-60VRDS(ON)=105m@VGS=-10V RDS(ON)=135m@VGS=-4.5V

KI4559EY

N-Channel60-V(D-S),175MOSFET

KIA4559F

BIPOLARLINEARINTEGRATEDCIRCUIT(DUALLOWNOISEOPERATIONALAMPLIFIER)

KIA4559P

BIPOLARLINEARINTEGRATEDCIRCUIT(DUALLOWNOISEOPERATIONALAMPLIFIER)

KIA4559S

BIPOLARLINEARINTEGRATEDCIRCUIT(DUALLOWNOISEOPERATIONALAMPLIFIER)

LM4559F

LowNoiseOperationalAmplifier