F-CellTM系列高压MOSFET

SVF2N60M/MG/MJ/N/NF/F/FG/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize onstate resist ·2A,600V,RDS(on)(typ.)=3.7Ω@VGS=10V\r\n·Low gate charge\r\n·Low Crss\r\n·Fast switching\r\n·Improved dv/dt capability;

Silan

士兰微

This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN.

文件：510.09 Kbytes 页数：6 Pages

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N-channel MOSFET (TO-220F , TO-220)

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

文件：752.89 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

N-channel MOSFET (TO-251 , TO-252)

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

文件：724.69 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技