平面高压MOS功率管

SVF1N60BM/MJ/D  N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。先进的工艺及原胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PMW马达驱动。 • 0.5A，600V，RDS(on)(典型值)=11Ω@VGS=10V\n• 低反向传输电容\n• 提升了dv/dt 能力;

Silan

士兰微

N-Channel MOSFET uses advanced trench technology

文件：1.39516 Mbytes 页数：5 Pages

DOINGTER

杜因特

N-Channel 650 V (D-S) MOSFET

文件：1.08793 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

文件：737.75 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技