600 V, 1.0 A Ultrafast Rectifier

Features and Benefits • Ultrafast 35 Nanosecond Recovery Times • 175°C Operating Junction Temperature • High Temperature Glass Passivated Junction • High Voltage Capability to 600 V • NRVUHS and SURHS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change R

文件：174.16 Kbytes 页数：6 Pages

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安森美半导体

600 V, 1.0 A Ultrafast Rectifier

This Ultrafast Rectifier is designed for use in switching power supplies, inverters, and as free wheeling diodes. • Ultrafast 35 ns Recovery Times\n• 175C Operating Junction Temperature\n• High Temperature Glass Passivated Junction\n• High Voltage Capability to 600 VMechanical Characteristics:\n• Case: Epoxy, Molded\n• Epoxy Meets UL 94 V0 @ 0.125 in\n• Weight: 95 mg (Approximately)\n• Finish: All External Surf;

ONSEMI

安森美半导体

600 V, 1.0 A Ultrafast Rectifier

Features and Benefits • Ultrafast 35 Nanosecond Recovery Times • 175°C Operating Junction Temperature • High Temperature Glass Passivated Junction • High Voltage Capability to 600 V • NRVUHS and SURHS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change R

文件：174.16 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

600 V, 1.0 A Ultrafast Rectifier

Features and Benefits • Ultrafast 35 Nanosecond Recovery Times • 175°C Operating Junction Temperature • High Temperature Glass Passivated Junction • High Voltage Capability to 600 V • NRVUHS and SURHS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change R

文件：174.16 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power Rectifier

文件：133.61 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power Rectifier

文件：62.61 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power Rectifier

ONSEMI

安森美半导体

Package：DO-214AA，SMB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 600V 1A SMB

ONSEMI

安森美半导体