STX93003数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The STX93003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STX83003, its complementary NPN transistor.

特性 Features

• ST93003 SILICON IN TO-92 PACKAGE
• LOW SPREAD OF DYNAMIC PARAMETERS
• MEDIUM VOLTAGE CAPABILITY
• VERY HIGH SWITCHING SPEED
• MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

简介

STX93003属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的STX93003晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。