STW8NC80Z中文资料意法半导体数据手册PDF规格书
STW8NC80Z规格书详情
DESCRIPTION
The third generatio- of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes betwee- gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as request ed by a large variety of single-switch applications.
- TYPICAL RDS(on) = 1.3 Ω
- EXTREMELY HIGH dv/dt CAPABILITY GATE TO-SOURCE ZENER DIODES
- 100 AVALANCHE TESTED
- VERY LOW INTRINSIC CAPACITANCES
- GATE CHARGE MINIMIZED
APPLICATIONS
- SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
- WELDING EQUIPMENT
产品属性
- 型号:
STW8NC80Z
- 功能描述:
MOSFET TO-247
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
24+ |
TO-3P |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ST |
03+04+ |
TO-3P |
2493 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST |
23+ |
TO-247 |
8795 |
询价 | |||
ST |
24+ |
TO-3P |
1000 |
原装现货热卖 |
询价 | ||
ST |
25+23+ |
TO-247 |
37786 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST |
1816+ |
TO-247 |
6523 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
ST |
01+ |
TO-247 |
20 |
原装现货海量库存欢迎咨询 |
询价 | ||
ST |
01+ |
TO-247 |
6000 |
绝对原装自己现货 |
询价 | ||
ST |
22+ |
TO-247 |
3000 |
原装现货库存.价格优势 |
询价 | ||
MOSPECSEMIC |
24+ |
原厂封装 |
6471 |
原装现货假一罚十 |
询价 |