STW82103B数据手册RF/IF射频/中频RFID的射频混频器规格书PDF

描述 Description

The STMicroelectronics STW82103B is an integrated down converter providing 8 dB of gain, 10.5 dB NF, and a very high input linearity by means of its passive mixer.
Embedding two wide band auto calibrating VCOs and an integer-N synthesizer, the STW82103B is suitable for both Rx and Tx requirements for Cellular infrastructure equipment.
The integrated RF balun and internal matching permit direct 50 ohm single-ended interface to RF port. The IF output is suitable for driving 200-ohm impedance filters.
By embedding a DAC with dual current output to drive an external PIN diode attenuator, the STW82103B replaces several costly discrete components and offers a significant footprint reduction.
The STW82103B device is designed with STMicroelectronics advanced 0.35 μm SiGe process. Its performance is specified over a -40 °C to +85 °C temperature range.

特性 Features

• High linearity:
• IIP3: +25 dBm
• 2FRF-2FLO spurious rejection: 80 dBc
• Noise figure:
• NF: 10.5 dB
• Conversion gain
• CG: 8 dB
• RF range: 2300 MHz to 2700 MHz
• Wide IF amplifier frequency range: 70 MHz to 400 MHz
• Integrated RF balun with internal matching
• Dual differential integrated VCOs with automatic center frequency calibration:
• LOA: 2200 to 2550 MHz
• LOB: 2500 to 3000 MHz
• Embedded integer-N synthesizer
• Dual modulus programmable prescaler (16/17 or 19/20)
• Programmable reference frequency divider (10 bits)
• Adjustable charge pump current
• Digital lock detector
• Excellent integrated phase noise
• Fast lock time: 150 μs
• Integrated DAC with dual current output
• Supply: 3.3 V and 5 V analog, 3.3 V digital
• Dual digital bus interface: SPI and I2C bus (fast mode) with 3 bit programmable address (1101A2A1A0)
• Process: 0.35 μm BICMOS SiGe
• Operating temperature range -40 to +85oC
• 44-lead exposed pad VFQFPN package 7x7x1.0 mm
• 应用
• Cellular infrastructure equipment:
• IF sampling receivers
• Digital PA linearization loops
• Other wireless communication systems.

简介

STW82103B属于RF/IF射频/中频RFID的射频混频器。由制造生产的STW82103B射频混频器射频混频器又称混频器，这些器件具有三个端口，用于改变两个输入信号的频率。射频混频器是一些无源或有源器件，可用于对信号进行上下变频。特征包括射频类型、频率、混频器数、增益、噪声系数、辅助属性、电流和电压。频率范围为 0 至 90 GHz，混频器数为 1、2、3 或 4。