isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) =8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.14 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 55V - 0.0065ohm - 80A TO-247 STripFET??POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a rema

文件：277.5 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-channel 55 V, 0.0065 廓, 80 A, TO-220, D2PAK, TO-247 STripFET??Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a rema

文件：368.17 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 55 V - 0.0065 廓 - 80 A - TO-220 - D2PAK - TO-247 STripFET??Power MOSFET

文件：358.21 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 55V - 0.0065ohm - 80A TO-247 STripFET™ POWER MOSFET

ST

意法半导体