STW80N06-10

N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEULTRAHIGHDENSITYPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.0085Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE ■HIGHdV/dtRUGGEDNESS ■APPLICATIONORIENTED

STW80N06-10

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.01Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

80N06-10

N-Channel60V(D-S)MOSFET

FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET •Materialcategorization:

STP80N06-10

N-Channel60V(D-S)MOSFET

STP80N06-10

N-CHANNELENHANCEMENTMODEULTRAHIGHDENSITYPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEULTRAHIGHDENSITYPOWERMOSTRANSISTOR ■TYPICALRDS(on)=8.5mΩ ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCETESTED ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■HIGHdV/dtRUGGEDNESS ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCU