N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET

■ TYPICAL RDS(on) = 1.05 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■

文件：111.97 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.15 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET

■ TYPICAL RDS(on) = 1.05 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■

文件：111.97 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.18 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET

■ TYPICAL RDS(on) = 1.05 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■

文件：111.97 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 900V - 1.05 ohm - 7A - Max220 FAST POWER MOS TRANSISTOR

N - CHANNEL 900V - 1.05 Ω - 7A - Max220 FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.05 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RANTING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD APPLICATIONS ■ HIGH

文件：49.69 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体