Automotive-grade N-channel 600 V, 37 m typ., 56 A, MDmesh DM6 Power MOSFET in a TO‑247 package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is

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STMICROELECTRONICS

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Automotive-grade N-channel 600 V, 37 mOhm typ., 56 A MDmesh DM6 Power MOSFET in a TO-247 package

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be • AEC-Q101 qualified \n• Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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Automotive-grade N-channel 600 V, 37 m typ., 56 A, MDmesh DM6 Power MOSFET in a TO‑247 long leads package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is

文件：279.83 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 600 V, 37 m typ., 56 A, MDmesh DM6 Power MOSFET in a TO‑247 long leads package

Features • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is

文件：279.83 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体