isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS=900V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：352.01 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.45 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RANTING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT,

文件：73.9 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

ST

意法半导体

900V N-Channel MOSFET

文件：412.57 Kbytes 页数：8 Pages

PANJIT

強茂

900V N-Channel MOSFET

文件：412.57 Kbytes 页数：8 Pages

PANJIT

強茂

900V N-Channel MOSFET

文件：412.57 Kbytes 页数：8 Pages

PANJIT

強茂