STW6NA90

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.45Ω ■±30VGATETOSOURCEVOLTAGERANTING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINTRINSICCAPACITANCE ■GATECHARGEMINIMIZED ■REDUCEDVOLTAGESPREAD APPLICATIONS ■HIGHCURRENT,

STW6NA90

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.9Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

PJF6NA90

900VN-ChannelMOSFET

PJP6NA90

900VN-ChannelMOSFET

PJZ6NA90

900VN-ChannelMOSFET

STU6NA90

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION TheMax220TMpackageisanewhighvolumepowerpackageexibitingthesamefootprintastheindustrystandardTO-220,butdesignedtoaccomodatemuchlargersiliconchips,normallysuppliedinbiggerpackages.Theincreaseddiecapacitymakesthedeviceidealtoreducecomponentcount