N-CHANNEL 550V Tjmax - 0.08ohm - 45A TO-247 MDmesh TM MOSFET

The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’

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STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=45A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-CHANNEL 500V - 0.07ohm - 45A TO-247 FDmesh?줡ower MOSFET With FAST DIODE

Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Features ■ 100 avalanche tested ■ High dv/dt and avala

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STMICROELECTRONICS

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Isc N-Channel MOSFET Transistor

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ISC

无锡固电

N-channel 500 V, 0.07 廓, 45 A, TO-247 FDmesh??Power MOSFET (with fast diode)

文件：587.63 Kbytes 页数：12 Pages

STMICROELECTRONICS

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N-channel 500 V, 0.07 廓, 45 A, TO-247 FDmesh??Power MOSFET (with fast diode)

文件：587.63 Kbytes 页数：12 Pages

STMICROELECTRONICS

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N沟道500 V、0.08 Ohm典型值、45 A MDmesh功率MOSFET，TO-247封装

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. This device offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizi • 100% avalanche tested \n• High dv/dt and avalanche capabilities \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

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