丝印：265N6F6；Package：TO-247；Automotive N-channel 60 V, 2.3 mΩ typ., 180 A STripFET™ F6 Power MOSFET in a TO-247 package

Features  Designed for automotive applications  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technolo

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STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 60 V, 2.3 mOhm typ., 180 A STripFET F6 Power MOSFET in TO-247 package

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Designed for automotive applications\nVery low on-resistance\nVery low gate charge\nHigh avalanche ruggedness\nLow gate drive power loss;

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意法半导体

High avalanche ruggedness

文件：634.7 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

TO-247

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上传：深圳市联世界科技有限公司

TO-247

ST/意法

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