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P10NB50FP

N-CHANNEL500V-0.55ohm-10.6A-TO-220/TO-220FPPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)per

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STB10NB50

N-CHANNEL500V-0.55ohm-10.6A-D2PAKPowerMESH]MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP10NB50

N-CHANNEL500V-0.55ohm-10.6A-TO-220/TO-220FPPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)per

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP10NB50FP

N-CHANNEL500V-0.55ohm-10.6A-TO-220/TO-220FPPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)per

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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