STU9NC90ZI中文资料意法半导体数据手册PDF规格书

DESCRIPTION

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

■ TYPICAL RDS(on) = 1.1Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ GATE-TO-SOURCE ZENER DIODES

■ 100 AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

APPLICATIONS

■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION

■ WELDING EQUIPMENT