| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
T3/DS3/E3/STS-1TRANSFORMERSEXTENDEDTEMPERATURERANGE | MPSINDMPS Industries, Inc. 美国芯源 | MPSIND | ||
8-bitMicrocontrollers | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
ATXIndustrialMotherboardwith8th/9thGenerationIntel®Core™Processor,DDR4DRAM,Option:4GLTEFunction Features ■8th/9thGenerationIntel®Core™LGA1151Processor ■SupportsMax.TDP6Core95W ■DDR42666/2400/2133MHz,max.64GB ■TwoIndependentDisplays:HDMIx1,VGAx1,DPx1 ■DualIntel®GigabitEthernet,i210ATx1,i219Vx1 ■USB3.2Gen1portsx4,USB2.0portsx5 ■M.22280 | AAEONAAEON Technology 研扬科技研扬科技（苏州）有限公司 | AAEON | ||
SchottkyBarrierDiode | ZOWIEZOWIE 智威智威科技股份有限公司 | ZOWIE | ||
Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
HIGHCURRENTPHASECONTROL | POSEICO Power Semiconductors | POSEICO | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-channelsiliconfield-effecttransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SiliconBipolarMMIC-Amplifier(Cascadable50W-gainblock9dBtypicalgainat1.0GHz9dBmtypicalP-1dBat1.0GHz3dB-bandwidth:DCto2.4GHz) SiliconBipolarMMIC-Amplifier Preliminarydata •Cascadable50Ω-gainblock •9dBtypicalgainat1.0GHz •9dBmtypicalP-1dBat1.0GHz •3dB-bandwidth:DCto2.4GHz | SIEMENS Siemens Ltd | SIEMENS | ||
BPS310Series-12mmUncompensatedLowPressureSensor | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
SINGLEPHASE3.0AMPBRIDGERECTIFIERS VOLTAGERANGE50to1000VoltsCURRENT3.0Ampere FEATURES *Idealforprintedcircuitboard *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any *Weight:3.36grams | BYTES Bytes | BYTES | ||
SINGLEPHASE3.0AMPBRIDGERECTIFIERS VOLTAGERANGE50to1000VoltsCURRENT3.0Ampere FEATURES *Idealforprintedcircuitboard *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any *Weight:3.36grams | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMHOP |
23+ |
TO-252-4L |
37650 |
全新原装真实库存含13点增值税票! |
询价 | ||
Samhop三合微 |
2020+ |
TO-252-4 |
41390 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
INFINEON/英飞凌 |
23+ |
SO-8 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
SAMHOP/三合微科 |
23+ |
TO-252-4L |
10000 |
公司只做原装正品 |
询价 | ||
SAMHOP/三合微科 |
2022+ |
TO-252-4 |
32500 |
原厂代理 终端免费提供样品 |
询价 | ||
SAMHOP/三合微科 |
2022+ |
TO-252-4 |
30000 |
进口原装现货供应,绝对原装 假一罚十 |
询价 | ||
SAMHOP/三合微科 |
2022+ |
TO-252-4 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
SAMHOP |
24+25+/26+27+ |
TO-252-4 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
SAMHOP/三合微科 |
20+ |
TO-252-4 |
32500 |
现货很近!原厂很远!只做原装 |
询价 | ||
SAMHOP |
24+ |
TO-252 |
5000 |
只做原装公司现货 |
询价 |
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